Venky Narayanamurti

The Narayanamurti Group

Principal Investigator
Rowland Institute at Harvard
Harvard University
100 Edwin H. Land Blvd.
Cambridge, MA 02142
Tel: 617-497-4709
Fax: 617-497-4627
Website: The Narayanamurti Group 

Research within the Narayanamurti Group is directed at the physics of hot electron- and hole- transport in novel semiconductor electronic materials and devices. A key goal is to study quantum confinement effects in nanostructures. The group interacts with similar electronic materials efforts at other universities, government, and industrial research laboratories

Selected Publications

  • "Weak localization and mobility in ZnO nanostructures," E. M. Likovich, K. J. Russell, E. W. Petersen, and V. Narayanamurti, Phys. Rev. B 80, 245318 (2009)

  • "Magnetoresistance in an asymmetric Ga1-xMnxAs resonant tunneling diode," E. Likovich, K. Russell, W. Yi, V. Narayanamurti, K.-C. Ku, M. Zhu, and N. Samarth, Phys. Rev. B 80, 201307(R) (2009)

  • "Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy," W. Yi, V. Narayanamurti, H. Lu, M. A. Scarpulla, A. C. Gossard, Y. Huang, J.-H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 95, 112102 (2009)

  • "Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles," E. W. Petersen, E. M. Likovich, K. J. Russell, and V. Narayanamurti, Nanotechnology 20, 405603 (2009)

  • "Direct injection tunnel spectroscopy of a p-n junction," E. M. Likovich, K. J. Russell, V. Narayanamurti, H. Lu, and A. C. Gossard, Appl. Phys. Lett. 95, 022106 (2009)

  • "Carrier density and magneto-resistance measurements on vanadium oxide thin films across the phase transition boundary," D. Ruzmetov, D. Heiman, B. Claflin, V. Narayanamurti and S. Ramanathan, Phys. Rev. B 75, 153107 (2009)

  • "Size-dependent impurity activation energy in GaN nanowires," J. Yoon, A. M. Girgis, I. Shalish, L. R. Ram-Mohan, and V. Narayanamurti, Appl. Phys. Lett. 94, 142102 (2009)

  • "Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures," W. Yi, A. J. Stollenwerk, V. Narayanamurti Surf. Sci. Rep. 64, 169 (2009)

  • "Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire," I. Shalish, G. Seryogin, W. Yi, J. M. Bao, M. A. Zimmler, E. Likovich, D. C. Bell, F. Capasso, and V. Narayanamurti, Nanoscale Res. Lett. 4, 532 (2009)