Ultra-low threshold gallium nitride photonic crystal nanobeam laser

Citation:

Niu N, Woolf A, Wang D, Zhu T, Quan Q. Ultra-low threshold gallium nitride photonic crystal nanobeam laser [Internet]. App. Phys. Lett. 2015;106:231104.
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Abstract:

We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

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Last updated on 10/30/2015