Rowland Institute at Harvard
100 Edwin H. Land Blvd
Cambridge MA 02142
This year marks my 25th year working at Harvard University, working in an applied physics laboratory environment. I spent 18 of those years at the School of Engineering and Applied Sciences (SEAS) as a manager and engineer and ran a 1.7 MV Tandem Ion Accelerator; became a local expert in the application of accelerator based elemental and materials analysis techniques, such as Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, Forward Recoil Detection (FRD) and Particle Induced X-ray Emission (PIXE) spectroscopy. I also developed a working knowledge of SEM, and Focused Ion Beam (FIB) instruments.
After that. I spent 4 years working for the Harvard Nanopore Group and helped to develop an Ice Lithography instrument which utilized a state of the art FE-SEM (Field Emmission Scanning Electron Microscope), beam writing instrumentation and metal deposition technology. After that I came to the Rowland Institute to help out with specific projects relating to the Junior Fellows program and to help out with the Freshman Seminar.
Along the way, I developed other skills including most aspects of vacuum technology; electronic troubleshooting to the component level: analog and digital; experience with high voltage; electrical wiring. Experienced in the use, handling and disposal of hazardous chemicals. mechanical design using CAD; complete machine shop skills including use of the lathe, milling machine, welding and silver soldering.
An ice lithography instrument; Han, Anpan; Chervinsky, John; Branton, Daniel; Golovchenko, J.A; Rev. Sci. Instrum. 82, 065110 (2011); doi:10.1063/1.3601005 (6 pages)
Electrical Noise Characterization of Noble Gas Ion Beam Fabricated Nanopore Detectors; Rollings, Ryan; Ledden, Bradley; Krueger, Eric; Salamo, Greg; Li, Jiali; Chervinsky, John; Golovchenko, Jene; American Physical Society, APS March Meeting, March 5-9, 2007, abstract #H34.011
Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation; Otani, Kan; Chen, Xi; Hutchinson, John W.; Chervinsky, John F.; Aziz, Michael J.; J. Appl. Phys. 100, 023535 (2006); DOI:10.1063/1.2215269; Published 31 July 2006
Characterization of Noble Gas Ion Beam Fabricated Single Molecule Nanopore Detectors; Rollings, Ryan; Ledden, Bradley; Shultz, John; Fologea, Daniel; Li, Jiali; Chervinsky, John; Golovchenko, Jene; American Physical Society, APS March Meeting, March 13-17, 2006, abstract #J1.288
Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer, O. D. Dubon, P. G. Evans, J. F. Chervinsky, M. J. Aziz, F. Spaepen, M. F. Chisholm, D. A. Muller and J. A. Golovchenko; Appl. Phys. Lett. 78, 1505 (2001); DOI:10.1063/1.1352692; Issue Date: 12 March 2001
Proton scattering off XMM optics: XMM mirror and RGS grating samples; A. Rasmussen, J. Chervinsky, J. Golovchenko, Columbia Astrophysics Laboratory, Document RGS-COL-CAL-99009, 1999
Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer; Evans, P. G.; Dubon, O. D.; Chervinsky, J. F.; Spaepen, F.; Golovchenko, J. A., Appl. Phys. Lett. 73, 3120 (1998); DOI:10.1063/1.122692 Issue Date: 23 November 1998
Effect of substrae miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow; Wilk G. D. ; Chervinsky J. F. ; Spaepen F. ; Golovchenko J. A., Appl. Phys. Lett. 70, 2553 (1997); DOI:10.1063/1.118918 Issue Date: 12 May 1997
Absence of discontinuties in ion-channeling parameters for YBa2Cu3O7thin films; N. E. Hecker, R. Haakenaasen, J. F. Chervinsky C. B. Eom, J. A. Golovchenko, Phys. Rev. B 55, R700 - R703 (1997)
Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au; Wilk, G. D.; Martinez, R. E.; Chervinsky, John F.; Spaepen, Frans; Golovchenko, J. A., Appl. Phys. Lett. 65, 866 (1994); DOI:10.1063/1.112185 Issue Date: 15 August 1994